High-Efficiency Solar Cells
Driving the future of solar energy with next-gen N-Type high-efficiency technology.
Setting the Standard for High-Purity Silicon
11N
Targeting 99.9999999% ultra-high purity electronic grade polysilicon
100%
Commitment to 100% traceable, ethically sourced raw materials
Tier-1
Equipping facility with Tier-1 global manufacturing standards
Ph 1
Preparing for Phase 1 of advanced Ingot & Wafer production
Our Roadmap to Uncompromised Quality
- Strategic sourcing of premium electronic-grade polysilicon
- State-of-the-art Czochralski (Cz) mono pulling technology planned
- Commitment to zero-defect material standards
- Optimizing for high-efficiency N-type solar cell architectures
- Sustainable and energy-efficient manufacturing design
Resistivity<Ω·cm>
>200
Purity<%>
>99.999999999%
Density<g/cm³>
2.32~2.34
Melting point<°C>
1410
Boiling point<°C>
2355
Next-Generation Silicon Wafers
210mm
Large-format N-Type monocrystalline wafers
Zero
Light-induced degradation (LID) for maximum lifespan
<130μm
Ultra-thin precision slicing technology
Thicknessμm
<130
Diametermm
210
Efficiency%
>25
TypeN-Type
Cz
LID%
Zero
